1 0 obj << >> endobj Diode Characteristics • Objectives In this experiment, the I-V characteristics of a PN junction diode are studied, measured and computer-verified using PSPICE simulations. Reverse biasThe V-I characteristic of PN junction diode is given below:Related Article: 1. PN Junction Diode : I-V Characteristics üThe barrier increase reduces the majority carrier diffusion to a negligible level üThe p-side electrons and n-side holes can wander into the depletion region and be swept to the other side à reverse I(nàp) üReverse bias situation àan increase of the potential hill üBeing associated with (a) P-N junction (b) schematic symbol (c) diode packaging. �o����b?b�f���,2o$!Tg�*t�6�+�Y�s�޼�PB�*]K5 A�aɃ�3��|]% %-B2��R��cW�0-hK��O+B�kU��J�iE6�Dm�v"��/HaSH�����YT�\Q��Ra���D �~���P̭i_m�y�pf�ވ�Yzekl��229��L�,Q�Ä4Y,� R������Z:�x �4����=�J��e x�uVKo�F��W�H�z��ȥM (��C�-�2J�I�j�}籔)[� qvg8�of�R ?�j)��>��.�t�O�g�g.���s����ڔ���z��O}�%I�$�K��3_(�s���*�*)���!UƊ»�:+d�n�o���ʍ1���RY������.�j�����jd��b*۵@�H� ��w��u$؁\5��a|�W���F}��o��?�o�W�.��f�����~�ӈ��~l>���r����2R��:���.RQ The V-I characteristics of a diode can be forward or reverse. /Length 18222 /Height 318 The V-I characteristics of a diode can be forward or reverse. 1 An experiment on the physics of the PN junction. CONCLUSION This experiment focuses on the investigation of the basic characteristics of a diode. The knee voltage of a diode is related to the barrier potential of the material used in the device. 14. /BitsPerComponent 8 ii) Junction Voltage vs. Current. >> An isolated pn junction makes a semiconductor diode. [1] Understanding how a diode works from an ‘atomistic’ and a ‘circuit elements’ point-of-view is a necessary first step towards understanding more complex /Filter /FlateDecode When discussing about the diode circuits we should look through the graphical representation of the operation of the Zener diode. /Resources 2 0 R /Parent 17 0 R The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. /Contents 21 0 R %PDF-1.4 endstream EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between the voltage and corressponding current generated. The P-N junction diode is a two-terminal device. stream /Font << /F16 7 0 R /F17 10 0 R /F27 13 0 R /F15 16 0 R >> • In forward bias condition, current is constant until certain voltage is reached. It is one of the simplest semiconductor devices as it allows current to flow in only one direction.The diode does not behave linearly with respect to the applied voltage, and it … At the end of the experiment, the student should be able to Explain the structure of a P-N junction diode; Explain the function of a P-N junction diode ... V-I Characteristics of Diode. PN Junction Diode in forwarding Bias. >> Simulator Procedure (as performed through the Online Labs) Select the characteristics of diode from the drop down list. Find Cut In Voltage , Static And Dynamic Resistance In Forward Direction At Forward Current Of 2mA & 8mA Respectively. A PN junction diode is formed when a single crystal of semiconductor is doped with acceptors impurities (Pentavalent) on one side and donor impurities (Trivalent) on the other side. /Length 1178 20 0 obj << 4 0 obj << When a PN-junction diode is connected in a forward bias by giving a positive voltage to the P-type material and a negative voltage to the N-type terminal. The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. To find cut-in Voltage for Silicon P-N Junction diode. Select the diode … Zener diode: It is the reverse biased havily doped silicon or germanium P-N junction diode which is operated in the breakdown region where current is limited by both external resistance and power dissipation of the diode. >> endobj • Theory When the diode's anode has a higher potential than the cathode, the diode is forward biased. It is called cut in voltage. This diode either made by silicon or germanium which has atomic number Z=14 or Z=32 respectively. Quiz Test Your Knowledge!! >> However, there is one major difference. endobj /Length 1321 9 ��2)T�֕�R�jD�&l���2�|����9;`��2�ڞ�:n��N�M�_�w)=`�{ h���Ŕ7T��c�Å����l���_;��|��5�b?�*nAS Silicon is preferred to diode because of … endobj x���y�]gu/��y8��=�%a�F+vb&.�A�rU�"�}����A�@CyP��JA�.�[!׏ endstream Further recombination of, free carrier on both side is prevented because of the depletion voltage generated due to. /Contents 4 0 R 21 0 obj << It generally shows the relation between bias voltage and current of a diode. Applying a positive potential to the anode and a negative potential to the cathode of the pn junction diode establishes a forward bias condition on the diode. donates electron and becomes positively charged ion)region. When an N-type material (has more free electrons) is fused with the P-type material (has more number of holes) to create a semiconductor diode, it is known as PN junction diode. Forward bias 3. Course Hero is not sponsored or endorsed by any college or university. The behaviour of the PN junction with regards to the potential barrier’s width produces an asymmetrical conducting two terminal device, better known as the PN Junction Diode. So let’s begin. /Type /Page Due to two electrodes it … A very small current will made at the junction due to the movement of minority charge carriers across the junction. Carrier on both side is prevented because of the depletion region width decrease and conduction of electron increase junction experiment... Along X axis and reverse biased conditions for Si P-N junction diode junction diode or. The given P-N junction diode is shown in the below figure v-i characteristics of pn junction diode experiment conducted as an introductory to Electronics and! 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